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Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25 Drain Current − Continuous @ TC = 25, Chip Continuous @ TC = 25, Limited by Package Continuous @ TA = 25, Limited by Wires Single Pulse (tp = 10 s)
RJC PD ID ID ID ID
1.1 113.6 125 120.5 95 250
/W W A A A A
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25
RJA PD ID
46 2.72 18.6
/W W A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25 Drain Current − Continuous @ TA = 25
RJA PD ID
63 1.98 15.9
/W W A
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 )
EAS
120
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from Case for 10 Seconds
TL
260
NTB125N02R Features
• Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous Operation • Low Ciss to Minimize Driver Loss • Optimized Qgd and RDS(on) for Shoot−through Protection • Low Gate Charge