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NTB125N02R, NTB125N02RG, NTB125N02RT4

NTB125N02R, NTB125N02RG, NTB125N02RT4 Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:.  D/C:500

NTB125N02R, NTB125N02RG, NTB125N02RT4 Picture

NTB125N02R, NTB125N02RG, NTB125N02RT4 Datasheet download

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Part Number: NTB125N02R

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: .

D/C: 500

Description: MOSFET N-CH 24V 15.9A D2PAK

 

 
 
 
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About NTB125N02R

PDF/DataSheet Download

Datasheet: NTB125N02R

File Size: 70494 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTB10N40

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Datasheet: NTB10N40

File Size: 72740 KB

Manufacturer: ON SEMICONDUCTOR

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About NTB125N02RT4

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Datasheet: NTB125N02RT4

File Size: 70494 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NTB125N02R Parameters

Technical/Catalog InformationNTB125N02R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB125N02R
NTB125N02R

NTB125N02R Maximum Ratings

 Parameter  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  24  Vdc
 Gate−to−Source Voltage − Continuous  VGS  ±20  Vdc
 Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current −
Continuous @ TC = 25, Chip
Continuous @ TC = 25, Limited by Package
Continuous @ TA = 25, Limited by Wires
Single Pulse (tp = 10 s)
 RJC
PD
ID
ID
ID
ID
 1.1
113.6
125
120.5
95
250
 /W
W
A
A
A
A
 Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
 RJA
PD
ID
 46
2.72
18.6
 /W
W
A
 Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
 RJA
PD
ID
 63
1.98
15.9
 /W
W
A
 Operating and Storage Temperature Range  TJ, Tstg  −55 to
150
 
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 )
 EAS  120  mJ
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds
 TL  260  

NTB125N02R Features

• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge

NTB125N02RG Parameters

Technical/Catalog InformationNTB125N02RG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB125N02RG
NTB125N02RG

NTB125N02RT4 Parameters

Technical/Catalog InformationNTB125N02RT4
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB125N02RT4
NTB125N02RT4
NTB125N02RT4OSCT ND
NTB125N02RT4OSCTND
NTB125N02RT4OSCT

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