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NTB25P06, NTB25P06G, NTB25P06T4

Table of contents:
Info of NTB25P06
Info of NTB25P06G
Info of NTB25P06T4

NTB25P06, NTB25P06G, NTB25P06T4 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

NTB25P06, NTB25P06G, NTB25P06T4 Datasheet download

Five Points

Part Number: NTB25P06

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET P-CH 60V 27.5A D2PAK

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NTB25P06 Parameters

Technical/Catalog Information	NTB25P06
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	27.5A
Rds On (Max) @ Id, Vgs	82 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1680pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTB25P06 NTB25P06

NTB25P06 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	-60	V
Gate−to−Source Voltage − Continuous − Non−Repetitive (t_p10 ms)	V_GS V_GSM	±15 ±20	V V_pk
Drain Current − Continuous @ T_A = 25 − Single Pulse (t_p10 µs)	I_D I_DM	27.5 80	A A_pk
Total Power Dissipation @ TA = 25	P_D	120	W
Operating and Storage Temperature Range	T_J, T_stg	−55 to +175
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25 (V_DD = 25 V, V_GS = 10 V, I_L(pk) = 20 A, L = 3 mH, R_G= 25 )	E_AS	600	mJ
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25 (V_DD = 75 Vdc, V_GS = 10 Vdc, L = 0.3 mH I_L(pk) = 55 A, V_DS = 60 Vdc)	E_AS	454	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)	R_JC R_{JA R_JA}	1.25 46.8 63.2	/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in²).

NTB25P06 Features

• Pb−Free Packages are Available

NTB25P06 Typical Application

• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits

NTB25P06G Parameters

Technical/Catalog Information	NTB25P06G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	27.5A
Rds On (Max) @ Id, Vgs	82 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1680pF @ 25V
Power - Max	120W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTB25P06G NTB25P06G

NTB25P06T4 Parameters

Technical/Catalog Information	NTB25P06T4
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	27.5A
Rds On (Max) @ Id, Vgs	82 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1680pF @ 25V
Power - Max	120W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTB25P06T4 NTB25P06T4 NTB25P06T4OS ND NTB25P06T4OSND NTB25P06T4OS

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