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NTB18N06L

MOSFET 60V 15A N-Channel

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SeekIC No. : 00161818 Detail

NTB18N06L: MOSFET 60V 15A N-Channel

NTB18N06L Data Sheet

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Part Number:
NTB18N06L
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 100 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 100 mOhms at 5 V


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 60 Vdc
Drain−to−Gate Voltage (RGS = 10 m) VDGR 60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)		 VGS ±10
±20		 Vdc
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp 10 s)		 ID
ID
IDM		 15
8.0
45		 Adc
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C		 PD 48.4
0.32		 Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to
+175		 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25 )		 EAS 61 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient		 RJC
RJA		 3.1
72.5		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		 TL 260 °C



Description

NTB18N06L is Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.




Parameters:

Technical/Catalog InformationNTB18N06L
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max48.4W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB18N06L
NTB18N06L



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