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NTB125N02R

MOSFET 24V 125A N-Channel

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NTB125N02R: MOSFET 24V 125A N-Channel

NTB125N02R Data Sheet

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Part Number:
NTB125N02R
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18.6 A
Resistance Drain-Source RDS (on) : 4.6 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 4.6 mOhms
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 18.6 A


Features:

• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge


Specifications

 Parameter  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  24  Vdc
 Gate−to−Source Voltage − Continuous  VGS  ±20  Vdc
 Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current −
Continuous @ TC = 25, Chip
Continuous @ TC = 25, Limited by Package
Continuous @ TA = 25, Limited by Wires
Single Pulse (tp = 10 s)		  RJC
PD
ID
ID
ID
ID		  1.1
113.6
125
120.5
95
250		  /W
W
A
A
A
A
 Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25		  RJA
PD
ID		  46
2.72
18.6		  /W
W
A
 Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25		  RJA
PD
ID		  63
1.98
15.9		  /W
W
A
 Operating and Storage Temperature Range  TJ, Tstg  −55 to
150		  
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 )		  EAS  120  mJ
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds		  TL  260  



Parameters:

Technical/Catalog InformationNTB125N02R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C15.9A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.98W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB125N02R
NTB125N02R



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