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NTB25P06

MOSFET -60V -27.5A Pchannel

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SeekIC No. : 00166362 Detail

NTB25P06: MOSFET -60V -27.5A Pchannel

NTB25P06 Data Sheet

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Part Number:
NTB25P06
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 82 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 82 mOhms


Features:

• Pb−Free Packages are Available


Application

• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits


Specifications

 Rating  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  -60  V
 Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)		 VGS
VGSM		 ±15
±20		 V
Vpk
Drain Current
− Continuous @ TA = 25
− Single Pulse (tp10 µs)		 ID
IDM		 27.5
80		 A
Apk
Total Power Dissipation @ TA = 25 PD 120 W
Operating and Storage
Temperature Range		  TJ, Tstg −55 to
+175
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 )		  EAS 600 mJ
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 55 A, VDS = 60 Vdc)		  EAS  454  mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)		  RJC
RJA
RJA		  1.25
46.8
63.2		  /W
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		  TL  260  

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in2).


Parameters:

Technical/Catalog InformationNTB25P06
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C27.5A
Rds On (Max) @ Id, Vgs82 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1680pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB25P06
NTB25P06



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