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Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NTB23N03R Maximum Ratings
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Drain Current − Continuous @ TA = 25°C, Limited by Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp = 10 s)
ID ID IDM
23 6.0 60
A
Total Power Dissipation @ TA = 25°C
PD
37.5
W
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Thermal Resistance − Junction−to−Case
RJC
3.3
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TL
260
°C
NTB23N03R Features
• Pb−Free Packages are Available
NTB23N03R Typical Application
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters