NES1821B-30, NES1821P-30, NES1821P-50 Selling Leads, Datasheet
MFG:NEC Package Cooled:09+ D/C:1000
NES1821B-30, NES1821P-30, NES1821P-50 Datasheet download
Part Number: NES1821B-30
MFG: NEC
Package Cooled: 09+
D/C: 1000
NES1821B-30, NES1821P-30, NES1821P-50
- Table of contents:
Info of NES1821B-30
Info of NES1821P-30
Info of NES1821P-50
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About NES1821B-30
PDF/DataSheet Download
Datasheet: NES1821B-30
File Size: 47305 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
NES1821B-30 General Description
The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.
The device incorporates WSi (tungsten silicide) gate or high reliability and SiO2 glassivation for urface stability.
NES1821B-30 Maximum Ratings
Drain to Source Voltage. VDS 15 V
Gate to Source Voltage ..VGS 7 V
Gate to Drain Voltage ...VGD 18 V
Drain Current ......... ID 27 A
Gate Current......... IG 180 mA
Total Power Dissipation .PT(*) 110 W
Channel Temperature .. Tch 175 °C
Storage Temperature .. Tstg 65 to +175 °C
Gate to Source Voltage ..VGS 7 V
Gate to Drain Voltage ...VGD 18 V
Drain Current ......... ID 27 A
Gate Current......... IG 180 mA
Total Power Dissipation .PT(*) 110 W
Channel Temperature .. Tch 175 °C
Storage Temperature .. Tstg 65 to +175 °C
NES1821B-30 Features
· High output power
· High gain
· High power added efficiency
· Internally matched input
· High reliability
· High gain
· High power added efficiency
· Internally matched input
· High reliability
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