Position: Home > DataSheet > Index N > NES Series > NESG2021M05, NESG2021M05-T1-A, NESG2021M16

Low Cost Custom Prototype PCB Manufacturer

NESG2021M05, NESG2021M05-T1-A, NESG2021M16

Table of contents:
Info of NESG2021M05
Info of NESG2021M05-T1-A
Info of NESG2021M16

NESG2021M05, NESG2021M05-T1-A, NESG2021M16 Selling Leads, Datasheet

MFG:NEC Category:Discrete Semiconductor Products Package Cooled:SOT343 D/C:04+

NESG2021M05, NESG2021M05-T1-A, NESG2021M16 Picture

NESG2021M05, NESG2021M05-T1-A, NESG2021M16 Datasheet download

Five Points

Part Number: NESG2021M05

Category: Discrete Semiconductor Products

MFG: NEC

Package Cooled: SOT343

D/C: 04+

Description: TRANS NPN 2GHZ M05

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

NESG2021M05 General Description

NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.

NESG2021M05 Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CEO	Collector to Emitter Voltage	V	13.0
V_CBO	Collector to Base Voltage	V	5.0
V_EBO	Emitter to Base Voltage	V	1.5
I_C	Collector Current	mA	35
PT2	Total Power Dissipation	mW	175
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.

NESG2021M05 Features

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY V_CEO= 5 V (Absolute Maximum)
• LOW NOISE FIGURE: N_F= 0.9 dB at 2 GHz N_F = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: M_SG = 22.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
• Pb Free

NESG2021M05-T1-A Parameters

Technical/Catalog Information	NESG2021M05-T1-A
Vendor	NEC
Category	Discrete Semiconductor Products
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.2dB @ 2GHz
Current - Collector (Ic) (Max)	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 5mA, 2V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Gain	15dB ~ 18dB
Power - Max	175mW
Compression Point (P1dB)	9dBm
Package / Case	M05
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NESG2021M05 T1 A NESG2021M05T1A

NESG2021M16 General Description

NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

NESG2021M16 Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CEO	Collector to Emitter Voltage	V	13.0
V_CBO	Collector to Base Voltage	V	5.0
V_EBO	Emitter to Base Voltage	V	1.5
I_C	Collector Current	mA	35
P_T2	Total Power Dissipation	mW	175
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.

NESG2021M16 Features

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY V_CEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: N_F = 0.9 dB at 2 GHz N_F = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: M_SG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components