NES2527-30, NES2527B-30, NES300599 Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:NEC
NES2527-30, NES2527B-30, NES300599 Datasheet download
Part Number: NES2527-30
MFG: RF
Package Cooled: N/A
D/C: NEC
NES2527-30, NES2527B-30, NES300599
- Table of contents:
Info of NES2527-30
Info of NES2527B-30
Info of NES300599
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About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
About NES2527B-30
PDF/DataSheet Download
Datasheet: NES2527B-30
File Size: 38604 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NES120
PDF/DataSheet Download
Datasheet: NES120
File Size: 690718 KB
Manufacturer: LAMBDA [DENSEI-LAMBDA]
Download : Click here to Download
NES2527B-30 General Description
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.
The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for surface stability.
NES2527B-30 Maximum Ratings
Drain to Source Voltage ... VDS 15 V
Gate to Source Voltage....VGS -7 V
Gate to Drain Voltage .... VGD -18 V
Drain Current .......... ID 27 A
Gate Current .......... IG 180 mA
Total Power Dissipation .. PT(*) 110 W
Channel Temperature .... Tch 175 °C
Storage Temperature ....Tstg -65 to +175 °C
Gate to Source Voltage....VGS -7 V
Gate to Drain Voltage .... VGD -18 V
Drain Current .......... ID 27 A
Gate Current .......... IG 180 mA
Total Power Dissipation .. PT(*) 110 W
Channel Temperature .... Tch 175 °C
Storage Temperature ....Tstg -65 to +175 °C
NES2527B-30 Features
• High output power
• High gain
• High power added efficiency
• Internally matched input
• High reliability
• High gain
• High power added efficiency
• Internally matched input
• High reliability
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