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NEC's NESG2031M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECsl ow profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
NESG2031M05 Maximum Ratings
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
13.0
VCBO
Collector to Base Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
175
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
NESG2031M05 Features
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG= 21.5 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance