NDS8425-NL, NDS8426, NDS8426/ Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:SOP8 D/C:09+
NDS8425-NL, NDS8426, NDS8426/ Datasheet download
Part Number: NDS8425-NL
MFG: FAIRCHILD
Package Cooled: SOP8
D/C: 09+
MFG:FAIRCHILD Package Cooled:SOP8 D/C:09+
NDS8425-NL, NDS8426, NDS8426/ Datasheet download
MFG: FAIRCHILD
Package Cooled: SOP8
D/C: 09+
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS8426
File Size: 272720 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol | Parameter | NDS8426 | Units |
VDSS | Drain-Source Voltage | 20 | V |
VGSS | Gate-Source Voltage | 8 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
9.9 | A |
20 | |||
PD |
Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
1.2 | |||
1 | |||
TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | |
THERMAL CHARACTERISTICS | |||
RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | /W |
RJC | Thermal Resistance, Junction-to-Case (Note 1) | 20 | /W |