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These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
NDS0605 Maximum Ratings
Symbol
Parameter
NDS0605
Units
VDSS VDGR
Drain-Source Voltage Drain-Gate Voltage (RGS1 M)
-60 -60 ±20 -0.18 -1 0.36 2.9 -55 to 150 300
V V V A
W mW/°C °C °C
VGSS
Gate-Source Voltage - Continuous
ID
Drain Current - Continuous - Pulsed
PD
Maximum Power Dissipation TA = 25°C Derate above 25°C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
RJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1)
350
°C/W
NDS0605 Features
`-0.18A, -60V. RDS(ON) = 5 @ VGS = -10V. `Voltage controlled p-channel small signal switch. `High density cell design for low RDS(ON) . `High saturation current.