NDS335N

MOSFET N-Ch LL FET Enhancement Mode

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SeekIC No. : 00160517 Detail

NDS335N: MOSFET N-Ch LL FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS335N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.14 Ohms
Package / Case : SuperSOT


Features:

`1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V RDS(ON) = 0.11 @ VGS= 4.5 V.
`Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.



Specifications

Symbol
Parameter
NDS335N
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
20
8
1.7
10
0.5
0.46
-55 to 150
V
V
A

W

°C
ID
Maximum Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS



Description

These N -Channel logic level enhancement mode power field effect transistors NDS335N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS335N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDS335N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.7A
Rds On (Max) @ Id, Vgs110 mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) @ Vds 240pF @ 10V
Power - Max460mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs9nC @ 4.5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS335N
NDS335N
NDS335NCT ND
NDS335NCTND
NDS335NCT



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