MOSFET N-Ch LL FET Enhancement Mode
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 8 V | Continuous Drain Current : | 1.7 A | ||
Resistance Drain-Source RDS (on) : | 0.14 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT | Packaging : | Reel |
Symbol |
Parameter |
NDS335N |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
20 8 1.7 10 0.5 0.46 -55 to 150 |
V V A W °C | |
ID |
Maximum Drain Current - Continuous - Pulsed |
(Note 1a) | ||
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Temperature Range |
These N -Channel logic level enhancement mode power field effect transistors NDS335N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS335N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Technical/Catalog Information | NDS335N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1.7A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.7A, 4.5V |
Input Capacitance (Ciss) @ Vds | 240pF @ 10V |
Power - Max | 460mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
Package / Case | SSOT-3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NDS335N NDS335N NDS335NCT ND NDS335NCTND NDS335NCT |