Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: - 60 V
Continuous Drain Current
: 0.12 A
Resistance Drain-Source RDS (on)
: 10000 mOhms
Features: `-0.18 and -0.12A, -60V. RDS(ON) = 10
`Voltage controlled p-channel small signal switch
`High density cell design for low RDS(ON)
`TO-92 and SOT-23 packages for both through hole and surface mount applications
`High saturation currentSpecifications
|
Symbol |
Parameter |
NDC632P |
Units |
|
VDSS
VDGR |
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1 M) |
-60
-60
±20
±30 |
V
V
V
V
A
W
mW/°C
°C
°C |
|
VGSS |
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs) |
|
ID |
Drain Current Continuous Pulsed |
-0.18 |
-0.12 |
|
PD |
Maximum Power Dissipation TA = 25°C
Derate above 25°C |
-1 |
| TJ,TSTG |
Operating and Storage Temperature Range |
0.8
5 |
0.36
2.9 |
| TL |
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds |
-55 to 150
300 |
THERMAL CHARACTERISTICS
| RJA |
Thermal Resistance, Junction-to-Ambient |
200 |
350 |
°C/W |
DescriptionThese P-Channel enhancement mode power field effect transistors NDS0610 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. NDS0610 is particularly suited to low voltage applications requiring a low current high side switch.
Parameters: | Technical/Catalog Information | NDS0610 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 120mA |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 500mA,10V |
| Input Capacitance (Ciss) @ Vds | 79pF @ 25V |
| Power - Max | 360mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS0610
NDS0610
NDS0610CT ND
NDS0610CTND
NDS0610CT
|
NDS0610 Data Sheet
