MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:06+
NDC651N, NDC651N / 651, NDC651N/651 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: 2009+ROHS
D/C: 06+
Description: MOSFET N-CH 30V 3.2A SSOT6
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PDF/DataSheet Download
Datasheet: NDC651N
File Size: 251674 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDC651N |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 15V |
| Power - Max | 800mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDC651N NDC651N NDC651NCT ND NDC651NCTND NDC651NCT |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
NDC651N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
30 20 3.2 15 1.6 1 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 |
°C/W °C/W |
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