MOSFET SO-6 P-CH LOGIC
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | - 20 V | Continuous Drain Current : | 2.4 A | ||
Resistance Drain-Source RDS (on) : | 0.16 Ohms | Configuration : | Single Triple Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
NDC632P |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
-30 -20 -2.4 -10 1.6 1 0.8 -55 to 150 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed | |||
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
TJ,TSTG | Operating and Storage Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 |
°C/W °C/W |
These P-Channel logic level enhancement mode power field effect transistors NDC652P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDC652P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Technical/Catalog Information | NDC652P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.4A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
Input Capacitance (Ciss) @ Vds | 290pF @ 15V |
Power - Max | 800mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Package / Case | SSOT-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NDC652P NDC652P NDC652PDKR ND NDC652PDKRND NDC652PDKR |