NDC652P

MOSFET SO-6 P-CH LOGIC

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NDC652P Picture
SeekIC No. : 00160476 Detail

NDC652P: MOSFET SO-6 P-CH LOGIC

floor Price/Ceiling Price

Part Number:
NDC652P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/20

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : - 20 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 0.16 Ohms Configuration : Single Triple Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 2.4 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.16 Ohms
Gate-Source Breakdown Voltage : - 20 V
Configuration : Single Triple Drain Dual Source


Features:

`-2.4A, -30V. RDS(ON) = 0.18 @ VGS = -4.5V RDS(ON) = 0.11@ VGS = -10V.
`Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDC632P
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
-30
-20
-2.4
-10
1.6
1
0.8
-55 to 150
V
V
A

W


°C
ID
Drain Current Continuous Pulsed  
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

78
30

°C/W
°C/W



Description

These P-Channel logic level enhancement mode power field effect transistors NDC652P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDC652P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDC652P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.4A
Rds On (Max) @ Id, Vgs110 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds 290pF @ 15V
Power - Max800mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDC652P
NDC652P
NDC652PDKR ND
NDC652PDKRND
NDC652PDKR



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