Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 20 V
Gate-Source Breakdown Voltage
: 8 V
Package / Case
: SSOT-6
Resistance Drain-Source RDS (on)
: 0.039 Ohms
Continuous Drain Current
: 4.1 A
Configuration
: Single Triple Drain Dual Source
Features: `4.1 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V
`RDS(ON) = 0.075 W @ VGS =2.7 V.
`Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.Pinout
Specifications
|
Symbol |
Parameter |
NDC631N |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage - Continuous |
20
8
4.1
15
1.6
1
0.8
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
78
30 |
°C/W
°C/W |
DescriptionThese N-Channel logic level enhancement mode power field effect transistors NDC631N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. NDC631N is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | NDC631N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.1A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 365pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDC631N
NDC631N
|
NDC631N Data Sheet
