NDC632P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.14 Ohms
Gate-Source Breakdown Voltage : - 8 V
Continuous Drain Current : - 2.7 A
Configuration : Single Triple Drain Dual Source


Features:

·-2.7A, -20V. R_DS(ON) = 0.14W @ V_GS = -4.5V R_DS(ON) = 0.2W @ V_GS = -2.7V.
·Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDC632P	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		-20 -8 -2.7 -10 1.6 1 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

These P-Channel logic level enhancement mode power field effect transistors NDC632P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDC632P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Parameters:

Technical/Catalog Information	NDC632P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	140 mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) @ Vds	550pF @ 10V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDC632P NDC632P NDC632PDKR ND NDC632PDKRND NDC632PDKR