MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:NPC D/C:1987
NDC40013, NDC631N, NDC631N/631 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: NPC
D/C: 1987
Description: MOSFET N-CHAN 20V 4.1A SSOT6
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PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDC631N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.1A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 365pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDC631N NDC631N |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
NDC631N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
20 8 4.1 15 1.6 1 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 |
°C/W °C/W |
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