NDC7002N

MOSFET SO-6 N-CH ENHANCE

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SeekIC No. : 00145876 Detail

NDC7002N: MOSFET SO-6 N-CH ENHANCE

floor Price/Ceiling Price

US $ .15~.34 / Piece | Get Latest Price
Part Number:
NDC7002N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.34
  • $.26
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 0.51 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Configuration : Dual
Drain-Source Breakdown Voltage : 50 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 2 Ohms
Continuous Drain Current : 0.51 A


Features:

`0.51A, 50V, RDS(ON) = 2 @ VGS=10V
`High density cell design for low RDS(ON).
`Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
`High saturation current.





Pinout






Specifications

Symbol
Parameter
NDC7002N
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
50
20
0.51
1.5
0.96
0.9
0.7
-55 to 150
V
V
A

W


°C
ID
Drain Current Continuous Pulsed (Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

130
60

°C/W
°C/W





Description

These dual N-Channel enhancement mode power field effect transistors NDC7002N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. NDC7002N is particularly suited for low voltage applications requiring a low current high side switch.






Parameters:

Technical/Catalog InformationNDC7002N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C510mA
Rds On (Max) @ Id, Vgs2 Ohm @ 510mA, 10V
Input Capacitance (Ciss) @ Vds 20pF @ 25V
Power - Max700mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1nC @ 10V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDC7002N
NDC7002N
NDC7002NDKR ND
NDC7002NDKRND
NDC7002NDKR



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