MOSFET SO-6 N-CH ENHANCE
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.51 A | ||
Resistance Drain-Source RDS (on) : | 2 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
NDC7002N |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
50 20 0.51 1.5 0.96 0.9 0.7 -55 to 150 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
130 |
°C/W °C/W |
These dual N-Channel enhancement mode power field effect transistors NDC7002N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. NDC7002N is particularly suited for low voltage applications requiring a low current high side switch.
Technical/Catalog Information | NDC7002N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 510mA |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 510mA, 10V |
Input Capacitance (Ciss) @ Vds | 20pF @ 25V |
Power - Max | 700mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 1nC @ 10V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NDC7002N NDC7002N NDC7002NDKR ND NDC7002NDKRND NDC7002NDKR |