MOSFET Dual N/P Channel FET Enhancement Mode
NDC7001C_Q: MOSFET Dual N/P Channel FET Enhancement Mode
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.51 A | ||
Resistance Drain-Source RDS (on) : | 1 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |