MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-163 D/C:SOT23-6
NDC632P, NDC632P / 632, NDC632P/632 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SOT-163
D/C: SOT23-6
Description: MOSFET P-CHAN 20V 2.7A SSOT6
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PDF/DataSheet Download
Datasheet: NDC632P
File Size: 260420 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDC631N
File Size: 252151 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDC632P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 2.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 10V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDC632P NDC632P NDC632PDKR ND NDC632PDKRND NDC632PDKR |
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
NDC632P |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
-20 -8 -2.7 -10 1.6 1 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | |||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 |
°C/W °C/W |
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