MTB3N60E, MTB42N03, MTB43N03 Selling Leads, Datasheet
MFG:MOT Package Cooled:. D/C:06+
MTB3N60E, MTB42N03, MTB43N03 Datasheet download
Part Number: MTB3N60E
MFG: MOT
Package Cooled: .
D/C: 06+
MTB3N60E, MTB42N03, MTB43N03
- Table of contents:
Info of MTB3N60E
Info of MTB42N03
Info of MTB43N03
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About MTB3N60E
PDF/DataSheet Download
Datasheet: MTB3N60E
File Size: 76258 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
MTB3N60E General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTB3N60E Maximum Ratings
| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDSS | 600 | Vdc |
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 600 | Vdc |
| GateSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Pulsed |
ID ID IDM |
3.0 2.4 14 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TA = 25(1) |
PD | 75 0.6 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 |
MTB3N60E Features
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
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