MTB20N20E, MTB20N20E/D, MTB23P06 Selling Leads, Datasheet
MFG:MOT Package Cooled:TO-263 D/C:TO
MTB20N20E, MTB20N20E/D, MTB23P06 Datasheet download
Part Number: MTB20N20E
MFG: MOT
Package Cooled: TO-263
D/C: TO
MTB20N20E, MTB20N20E/D, MTB23P06
- Table of contents:
Info of MTB20N20E
Info of MTB20N20E/D
Info of MTB23P06
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About MTB20N20E
PDF/DataSheet Download
Datasheet: MTB20N20E
File Size: 264924 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTB20N20E/D
PDF/DataSheet Download
Datasheet: MTB20N20E/D
File Size: 227875 KB
Manufacturer:
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About MTB23P06
PDF/DataSheet Download
Datasheet: MTB23P06
File Size: 255086 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTB20N20E General Description
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB20N20E Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
200 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
200 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
20 12 60 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
45 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTB20N20E Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
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