Position: Home > DataSheet > Index M > MTB Series > MTB10N40, MTB10N40E, MTB1306

Low Cost Custom Prototype PCB Manufacturer

MTB10N40, MTB10N40E, MTB1306

Table of contents:
Info of MTB10N40
Info of MTB10N40E
Info of MTB1306

MTB10N40, MTB10N40E, MTB1306 Selling Leads, Datasheet

MFG:ON Package Cooled:TO-263 D/C:05+

MTB10N40, MTB10N40E, MTB1306 Datasheet download

Five Points

Part Number: MTB10N40

MFG: ON

Package Cooled: TO-263

D/C: 05+

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

MTB10N40E General Description

The D²PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB10N40E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	400	Vdc
DraintoGate Voltage (R_GS= 1.0 M)	V_DGR	400	Vdc
GatetoSource Voltage - Continuous	V_GS	± 20	Vdc
Drain Current - Continuous - Continuous @ 100 - Single Pulse (t_p 10 s)	I_D I_D I_DM	10 6.0 40	Adc Apk
Total Power Dissipation Derate above 25 Total Power Dissipation @ T_A = 25, when mounted with the minimum recommended pad size	P_D	125 1.00 2.5	Watts W/ Watts
Operating and Storage Temperature Range	T_J, T_stg	55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting T_J = 25 (V_DD = 25Vdc, V_GS = 10 Vdc, Peak I_L= 10Apk, L = 10 mH, R_G= 25 )	E_AS	520	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted with the minimum recommended pad size	R_JC R_JA R_JA	1.00 62.5 50	/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds	T_L	260

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

MTB10N40E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSSand V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number

MTB1306 General Description

The D²PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB1306 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	30	Vdc
DraintoGate Voltage (R_GS= 1.0 M)	V_DGR	30	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100 - Single Pulse (t_p 10 s)	I_D I_D I_DM	75 59 225	Adc Apk
Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ T_A= 25 (1)	P_D	150 1.2 2.5	Watts W/ Watts
Operating and Storage Temperature Range	T_J, T_stg	55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (V_DD = 25 Vdc, V_GS = 10 Vdc, Peak I_L= 75 Apk, L = 0.1 mH, R_G = 25 )	E_AS	280	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1)	R_JC R_JA R_JA	0.8 62.5 50	/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds	T_L	260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and HDTMOS are trademarks of Motorola, Inc.

MTB1306 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components