MTB0TG00MF1-6S00E, MTB10010U, MTB1040S Selling Leads, Datasheet
MFG:BGA Package Cooled:0534+ D/C:POLYSTAK
MTB0TG00MF1-6S00E, MTB10010U, MTB1040S Datasheet download
Part Number: MTB0TG00MF1-6S00E
MFG: BGA
Package Cooled: 0534+
D/C: POLYSTAK
MTB0TG00MF1-6S00E, MTB10010U, MTB1040S
- Table of contents:
Info of MTB0TG00MF1-6S00E
Info of MTB10010U
Info of MTB1040S
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About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
About MTB10010U
PDF/DataSheet Download
Datasheet: MTB10010U
File Size: 92221 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
MTB10010U General Description
NPN silicon planar epitaxial microwave transistor with internal input prematching cell in a SOT440A metal ceramic package with base connected to flange.
MTB10010U Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCEO | collector-emitter voltage | open base | - | 15 | V |
| VCES | collector-emitter voltage | RBE = 0 | - | 40 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current (average) | - | 0.75 | A | |
| Ptot | total power dissipation | Tmb < 75 ; tp = 1 s; = 1% | - | 36 | W |
| Tstg | storage temperature | - | +200 | ||
| Tj | junction temperature | -65 | 20 | ||
| Tsld | soldering temperature t £ | t 10 s; note 1 | - | 235 |
MTB10010U Features
· Input prematching cell allows an easier design of circuits
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good characteristics stability and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good characteristics stability and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.
MTB10010U Typical Application
Common base class C narrowband pulsed power amplifiers at 1030 MHz for IFF applications.
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