MTB15N06V, MTB15N06VT4, MTB16N25E Selling Leads, Datasheet
MFG:MOT Package Cooled:05+/06+ D/C:06+
MTB15N06V, MTB15N06VT4, MTB16N25E Datasheet download
Part Number: MTB15N06V
MFG: MOT
Package Cooled: 05+/06+
D/C: 06+
MTB15N06V, MTB15N06VT4, MTB16N25E
- Table of contents:
Info of MTB15N06V
Info of MTB15N06VT4
Info of MTB16N25E
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About MTB15N06V
PDF/DataSheet Download
Datasheet: MTB15N06V
File Size: 281393 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
About MTB16N25E
PDF/DataSheet Download
Datasheet: MTB16N25E
File Size: 266184 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTB15N06V General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB15N06V Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ±25 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
15 8.7 45 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
55 0.37 3.0 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 15Apk, L = 1.0 mH, RG = 25 ) |
EAS |
113 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
2.73 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
Designer's is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTB15N06V Features
New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
MTB16N25E General Description
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB16N25E Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
250 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
250 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
16 10 56 |
Adc Apk |
| Total Power Dissipation Derate above 25 Total Power Dissipation @ TA = 25, when mounted with the minimum recommended pad size |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 80Vdc, VGS = 10 Vdc, Peak IL = 16Apk, L = 3.0 mH, RG = 25 ) |
EAS |
384 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted with the minimum recommended pad size |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTB16N25E Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
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