MTB23P06VT4, MTB25N03, MTB29N15E Selling Leads, Datasheet
MFG:ON Package Cooled:. D/C:06+
MTB23P06VT4, MTB25N03, MTB29N15E Datasheet download
Part Number: MTB23P06VT4
MFG: ON
Package Cooled: .
D/C: 06+
MTB23P06VT4, MTB25N03, MTB29N15E
- Table of contents:
Info of MTB23P06VT4
Info of MTB25N03
Info of MTB29N15E
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About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
About MTB001
PDF/DataSheet Download
Datasheet: MTB001
File Size: 363416 KB
Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Download : Click here to Download
About MTB29N15E
PDF/DataSheet Download
Datasheet: MTB29N15E
File Size: 78185 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTB29N15E General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB29N15E Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
150 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
150 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
29 19 102 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL =29 Apk, L = 1.0 mH, RG = 25 ) |
EAS |
421 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTB29N15E Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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