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14A, 600V at T C = 25 oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150 oC Short Circuit Rating Low Conduction Loss
HGTP7N60C3D Parameters
Technical/Catalog Information
HGTP7N60C3D
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
14A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 7A
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220AB
Packaging
Tube
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HGTP7N60C3D HGTP7N60C3D
HGTP7N60C3D General Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25.and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
