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HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3

Table of contents:
Info of HGTP3N60B3
Info of HGTP3N60B3D
Info of HGTP3N60C3

HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3 Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-220AB D/C:08+

HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3 Picture

HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3 Datasheet download

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Part Number: HGTP3N60B3

MFG: Intersil/FAIRCHILD

Package Cooled: TO-220AB

D/C: 08+

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HGTP3N60B3 Maximum Ratings

HGTD3N60B3S, HGT1S3N60B3S HGTP3N60B3
Collector to Emitter Voltage	B_VCES	600	V
Collector Current Continuous
At _TC = 25oC	I_C25	7.0	A
At _TC = 110oC	I_C110	3.5	A
Collector Current Pulsed (Note 1)	I_CM	20	A
Gate to Emitter Voltage Continuous	V_GES	±20	V
Gate to Emitter Voltage Pulsed	V_GEM	±30	V
Switching Safe Operating Area at T_J = 150oC (Figure 2)	S_SOA	18A at 600V
Power Dissipation Total at T_C = 25oC	P_D	33.3	W
Power Dissipation Derating T_C > 25oC		0.27	W/oC
Reverse Voltage Avalanche Energy	E_ARV	100	m^J
Operating and Storage Junction Temperature Range	TJ, _TSTG	-55 to 150	oC
Maximum Lead Temperature for Soldering	T_L	260	oC
Short Circuit Withstand Time (Note 2) at V_GE = 12V	t_SC	5	µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V	t_SC	10	µs

HGTP3N60B3 Features

• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss

HGTP3N60B3D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .IC110
Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . .. . IEC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . .. VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . .. SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . TPKG
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . tSC

HGTP3N60B3D Features

• 7A, 600V TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
• TB334 "Guidelines for Soldering Surface Mount
- Components to PC Boards

HGTP3N60C3 General Description

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49113.

HGTP3N60C3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 6 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C1103 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 24 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 14) . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 33 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.27 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .T_J, T_STG -40 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 10V (Figure 6) . . . . . . . . . . . . . . . . . .t_SC 8 µs

HGTP3N60C3 Features

• 6A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP3N60C3 Connection Diagram

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