HGTP2N120CN, HGTP2N120CND, HGTP2N120CNS Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:TO
HGTP2N120CN, HGTP2N120CND, HGTP2N120CNS Datasheet download
Part Number: HGTP2N120CN
MFG: Fairchild
Package Cooled: N/A
D/C: TO
HGTP2N120CN, HGTP2N120CND, HGTP2N120CNS
- Table of contents:
Info of HGTP2N120CN
Info of HGTP2N120CND
Info of HGTP2N120CNS
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About HGTP2N120CN
PDF/DataSheet Download
Datasheet: HGTP2N120CN
File Size: 91629 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTP2N120CND
PDF/DataSheet Download
Datasheet: HGTP2N120CND
File Size: 95188 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTP2N120CNS
PDF/DataSheet Download
Datasheet: HGTP2N120CNS
File Size: 510519 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
HGTP2N120CN General Description
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313.
HGTP2N120CN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . IC25 13 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . .. . SSOA 13A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .. EAV 18 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Collector Current Continuous
At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . IC25 13 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . .. . SSOA 13A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .. EAV 18 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
HGTP2N120CN Features
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP2N120CN Connection Diagram
HGTP2N120CND General Description
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49311.
HGTP2N120CND Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 13 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . SSOA 13A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 13 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . SSOA 13A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs
HGTP2N120CND Features
• 13A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
HGTP2N120CND Connection Diagram
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