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HGTP14N41G3VLS, HGTP15N120C3, HGTP15N40C1

Table of contents:
Info of HGTP14N41G3VLS
Info of HGTP15N120C3
Info of HGTP15N40C1

HGTP14N41G3VLS, HGTP15N120C3, HGTP15N40C1 Selling Leads, Datasheet

MFG:FAIRCHILD/INTERSIL Package Cooled:TO D/C:TO

HGTP14N41G3VLS, HGTP15N120C3, HGTP15N40C1 Picture

HGTP14N41G3VLS, HGTP15N120C3, HGTP15N40C1 Datasheet download

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Part Number: HGTP14N41G3VLS

MFG: FAIRCHILD/INTERSIL

Package Cooled: TO

D/C: TO

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HGTP15N120C3 General Description

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTP15N120C3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 35 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 15 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 120 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150oC, Figure 14 . . . . . . . .. SSOA 15A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D164 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . t_SC6 s
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . t_SC 25 s

HGTP15N120C3 Features

• 35A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 350ns at T_J = 150
• Short Circuit Rating

HGTP15N120C3 Connection Diagram

HGTP15N40C1 General Description

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

HGTP15N40C1 Maximum Ratings

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . .    V_CES 400 500 400 500 V
Collector-Gate Voltage R_GE = 1MW. . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .   . V_CGR 400 500 400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . V_CES(rev.) -5 -5 -5 -5 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . V_GE ±20 ±20 ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . I_C 20 20 15 15 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . I_CM 35 35 35 35 A
Power Dissipation at T_C = +25 . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . P_D100 100 75 75 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . 0.8 0.8 0.6 0.6 W/
Operating and Storage Junction Temperature Range . . T_J, T_STG -55 to +150 -55 to +150 -55 to +150 -55 to +150

HGTP15N40C1 Features

• 15A and 20A, 400V and 500V
• V_CE(ON) 2.5V
• T_FI 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode

HGTP15N40C1 Typical Application

• Power Supplies
• Motor Drives
• Protection Circuits

HGTP15N40C1 Connection Diagram

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