HGTN40N60, HGTP10N50F1D, HGTP11N120CN Selling Leads, Datasheet
MFG:ST Package Cooled:MODULE D/C:N/A
HGTN40N60, HGTP10N50F1D, HGTP11N120CN Datasheet download
Part Number: HGTN40N60
MFG: ST
Package Cooled: MODULE
D/C: N/A
HGTN40N60, HGTP10N50F1D, HGTP11N120CN
- Table of contents:
Info of HGTN40N60
Info of HGTP10N50F1D
Info of HGTP11N120CN
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About HGT1N30N60A4D
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About HGTP10N50F1D
PDF/DataSheet Download
Datasheet: HGTP10N50F1D
File Size: 34859 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTP11N120CN
PDF/DataSheet Download
Datasheet: HGTP11N120CN
File Size: 141382 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HGTP10N50F1D General Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
HGTP10N50F1D Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 400 500 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 12 12 A
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .IC90 10 10 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 12 12 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 ±20 V
Diode Forward Current at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 16 16 A
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . .. TJ, TSTG -55 to +150 -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 260
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 400 500 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 12 12 A
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .IC90 10 10 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 12 12 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 ±20 V
Diode Forward Current at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 16 16 A
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . .. TJ, TSTG -55 to +150 -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 260
HGTP10N50F1D Features
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4ms
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns
• Latch Free Operation
• Typical Fall Time < 1.4ms
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns
HGTP10N50F1D Connection Diagram
HGTP11N120CN General Description
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49291.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49291.
HGTP11N120CN Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 43 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 22A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 55A at 1200V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD 298 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .2.38 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . . . . . tSC 8µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . ..tSC 15µs
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 43 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 22A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 55A at 1200V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PD 298 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .2.38 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . . . . . tSC 8µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . ..tSC 15µs
HGTP11N120CN Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
HGTP11N120CN Connection Diagram
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