Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
• 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1s, 0.5ms • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode
HGTH12N40E1 Connection Diagram
HGTH12N50C1 General Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
• 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1s, 0.5ms • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode
HGTH12N50C1 Connection Diagram
HGTH12N50E1 General Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.