Position: Home > DataSheet > Index H > HGT Series > HGTG32N60E2, HGTG34N100E2, HGTG40N6

Low Cost Custom Prototype PCB Manufacturer

HGTG32N60E2, HGTG34N100E2, HGTG40N6

Table of contents:
Info of HGTG32N60E2
Info of HGTG34N100E2
Info of HGTG40N6

HGTG32N60E2, HGTG34N100E2, HGTG40N6 Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-247 D/C:TO

HGTG32N60E2, HGTG34N100E2, HGTG40N6 Picture

HGTG32N60E2, HGTG34N100E2, HGTG40N6 Datasheet download

Five Points

Part Number: HGTG32N60E2

MFG: Intersil/FAIRCHILD

Package Cooled: TO-247

D/C: TO

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

HGTG32N60E2 General Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

This device incorporates generation two design techniques which yield improved peak current capability and larger short circuit withstand capability than previous designs.

HGTG32N60E2 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . BV_CES 600 V
Collector-Gate Voltage R_GE= 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. V_CGR 600 V
Collector Current Continuous at T_C = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 50 A
Collector Current Continuous at V_GE = 15V, at T_C = +90 . . . . . . . . . . . . . . . . . . . I_C90 32 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM±30 V
Switching Safe Operating Area at T_J= +150 . . . . . . . . . . . . . . . . . SSOA 200A at 0.8 BV_CES
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 208 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .T_J, T_STG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2)at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 3 ms
Short Circuit Withstand Time (Note 2)at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 15 ms

HGTG32N60E2 Features

• 32A, 600V
• Latch Free Operation
• Typical Fall Time - 600ns
• High Input Impedance
• Low Conduction Loss

HGTG32N60E2 Connection Diagram

HGTG34N100E2 General Description

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The much lower on-state voltage drop varies only moderately between +25 and +150.

The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTG34N100E2 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..BV_CES 1000 V
Collector-Gate Voltage, R_GE =1MW . . . . . . . . . . . . . . . . . . . . . .. .  . .V_CGR 1000 V
Collector Current Continuous at T_C = +25. . . . . . . . . . . . . . . . . . .  . . I_C25 55 A
at V_GE = 15V, at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C90 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . .  . V_GES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. V_GEM ±30 V
Switching Safe Operating Area at T_J= +150 . . . . . . . .SSOA 200A at 0.8 BV_CES
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . P_D 208 W
Power Dissipation Derating T_C > +25oC . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . .T_J, T_STG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . T_L260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . t_SC 3 s
at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 10 s

HGTG34N100E2 Features

• 34A, 1000V
• Latch Free Operation
• Typical Fall Time - 710ns
• High Input Impedance
• Low Conduction Loss

HGTG34N100E2 Connection Diagram

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components