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HGTG30N60B3D, HGTG30N60C3, HGTG30N60C3D

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Info of HGTG30N60B3D
Info of HGTG30N60C3
Info of HGTG30N60C3D

HGTG30N60B3D, HGTG30N60C3, HGTG30N60C3D Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

HGTG30N60B3D, HGTG30N60C3, HGTG30N60C3D Datasheet download

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Part Number: HGTG30N60B3D

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: IGBT N-CH UFS 600V 30A TO-247

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HGTG30N60B3D Parameters

Technical/Catalog Information	HGTG30N60B3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Power - Max	208W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG30N60B3D HGTG30N60B3D

HGTG30N60B3D Maximum Ratings

CollectortoEmitterVoltage......................................................BVCES
Collector Current Continuous
At TC =25oC.............................................................................IC25
At TC =110oC..........................................................................IC110
Average Diode Forward Current at 11............................... IEC(AVG)
CollectorCurrentPulsed(Note1) ................................................. ICM
GatetoEmitterVoltageContinuous.............................................VGES
GatetoEmitterVoltagePulsed................................................... VGEM
Switching Safe Operating Area at TJ =150oC(Figure2)............ SSOA
Power Dissipation Total at TC =25oC...........................................PD
Power Dissipation Derating TC >25oC..........................................
OperatingandStorageJunctionTemperatureRange.................TJ,TSTG
MaximumLeadTemperatureforSoldering........................................ TL
Short Circuit Withstand Time (Note 2) at VGE =12V.....................tSC
Short Circuit Withstand Time (Note 2) at VGE =10V.....................tSC

HGTG30N60B3D Features

• 60A, 600V, TC =25oC
• 600V Switching SOA Capability
• TypicalFallTime.................90nsatTJ =150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGTG30N60C3 General Description

The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49051.

HGTG30N60C3 Maximum Ratings

Collector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 63 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C110 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 252 A
Gate To Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate To Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 14) . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 208 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.67 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . t_SC 4 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . ..t_SC 15 µs

HGTG30N60C3 Features

• 63A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss

HGTG30N60C3 Connection Diagram

HGTG30N60C3D Parameters

Technical/Catalog Information	HGTG30N60C3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	63A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Power - Max	208W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG30N60C3D HGTG30N60C3D

HGTG30N60C3D Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
HGTG30N60C3D	Full Production	RoHS Compliant	$7.16	TO-247	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: G30N60C3D

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG30N60C3D is available. Click here for more information .

HGTG30N60C3D Features

• 63A, 600V at T_C= 25
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGTG30N60C3D Connection Diagram

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