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HGTG20N120, HGTG20N120C3D, HGTG20N120CN

Table of contents:
Info of HGTG20N120
Info of HGTG20N120C3D
Info of HGTG20N120CN

HGTG20N120, HGTG20N120C3D, HGTG20N120CN Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-247 D/C:08+

HGTG20N120, HGTG20N120C3D, HGTG20N120CN Picture

HGTG20N120, HGTG20N120C3D, HGTG20N120CN Datasheet download

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Part Number: HGTG20N120

MFG: Intersil/FAIRCHILD

Package Cooled: TO-247

D/C: 08+

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HGTG20N120C3D General Description

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

The diode used in anti-parallel with the IGBT was formerly developmental type TA49155.

The IGBT diode combination was formerly developmental type TA49264.

HGTG20N120C3D Maximum Ratings

                                                                                                                        HGTG20N120C3D     UNITS
Collector to Emitter Voltage..................................................................BV_CES          1200                    V
Collector Current Continuous
    At T_C= 25 ....................................................................................... I_C25            45                     A
    At T_C = 110......................................................................................I_C110           20                     A
Collector Current Pulsed (Note 1) .............................................................I_CM           160                   A
Gate to Emitter Voltage Continuous.........................................................V_GES ±20                  V
Gate to Emitter Voltage Pulsed .............................................................. V_GEM±30                   V
Switching Safe Operating Area at T_J = 150, Figure 2................SSOA 20A at           1200                  V
Power Dissipation Total at T_C = 25...........................................................P_D            208                   W
Power Dissipation Derating T_C > 25.......................................................                  1.67               W/
Reverse Voltage Avalanche Energy .........................................................E_ARV           100                   mJ
Operating and Storage Junction Temperature Range ........................T_J, T_STG          -40 to 150
Maximum Lead Temperature for Soldering ..................................................T_L260
Short Circuit Withstand Time (Note 2) at V_GE = 15V.................................. t_SC               8                  ms
Short Circuit Withstand Time (Note 2) at V_GE = 12V.................................. t_SC               15                 ms

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to
                the device. This is a stress only rating and operation of the device at these or any other
                 conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 720V, T_J= 125, R_GE = 3W.

HGTG20N120C3D Features

• 45A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss

HGTG20N120CN Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 63 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . .SSOA 100A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 390 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AV 125 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 3) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . .t_SC 15 µs

HGTG20N120CN Features

• 63A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model

HGTG20N120CN Connection Diagram

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