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HGTG12N60A4, HGTG12N60A4D, HGTG12N60B3

Table of contents:
Info of HGTG12N60A4
Info of HGTG12N60A4D
Info of HGTG12N60B3

HGTG12N60A4, HGTG12N60A4D, HGTG12N60B3 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:09+

HGTG12N60A4, HGTG12N60A4D, HGTG12N60B3 Datasheet download

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Part Number: HGTG12N60A4

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 09+

Description: IGBT N-CH SMPS 600V 54A TO247

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HGTG12N60A4 Parameters

Technical/Catalog Information	HGTG12N60A4
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Power - Max	167W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG12N60A4 HGTG12N60A4

HGTG12N60A4 General Description

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.

HGTG12N60A4 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 54 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C₁₁₀ 23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_PKG 260

HGTG12N60A4 Features

• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T_J = 125
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards

HGTG12N60A4 Connection Diagram

HGTG12N60A4D Parameters

Technical/Catalog Information	HGTG12N60A4D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	54A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Power - Max	167W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG12N60A4D HGTG12N60A4D

HGTG12N60A4D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

HGTG12N60A4D Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

HGTG12N60B3 General Description

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49171.

HGTG12N60B3 Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 27 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . .SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_ARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC5 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs

HGTG12N60B3 Features

• 27A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss

HGTG12N60B3 Connection Diagram

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