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HGTD7N60C3, HGTD7N60C3S, HGTD7N60C3S9A

Table of contents:
Info of HGTD7N60C3
Info of HGTD7N60C3S
Info of HGTD7N60C3S9A

HGTD7N60C3, HGTD7N60C3S, HGTD7N60C3S9A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO D/C:TO

HGTD7N60C3, HGTD7N60C3S, HGTD7N60C3S9A Picture

HGTD7N60C3, HGTD7N60C3S, HGTD7N60C3S9A Datasheet download

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Part Number: HGTD7N60C3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO

D/C: TO

Description: IGBT UFS N-CH 600V 14A TO-252AA

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HGTD7N60C3 General Description

The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150 °C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls,power supplies and drivers for solenoids, relays and contactors.

HGTD7N60C3 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector Current Continuous
At T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25At T = 110° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I _C110Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . P_D
Power Dissipation Derating T _C> 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t _SC
Short Circuit Withstand Time (Note 2) at V _GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC

HGTD7N60C3 Features

14A, 600V at T_c = 25 °C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . .140ns at T_J = 150° C
Short Circuit Rating
Low Conduction Loss

HGTD7N60C3S Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES
Collector Current Continuous
At T_C= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T _C = 110° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I _C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM
Switching Safe Operating Area at T_J= 150 °C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T > 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J , T _STGMaximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Short Circuit Withstand Time (Note 2) at V GE = 15V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

HGTD7N60C3S Features

14A, 600V at T _C = 25 ^oC
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150 ^oC
Short Circuit Rating
Low Conduction Loss

HGTD7N60C3S9A Parameters

Technical/Catalog Information	HGTD7N60C3S9A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 7A
Power - Max	60W
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTD7N60C3S9A HGTD7N60C3S9A

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