HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Selling Leads, Datasheet
MFG:Intersil Package Cooled:TO-252 D/C:TO
HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Datasheet download
Part Number: HGTD6N40E1S
MFG: Intersil
Package Cooled: TO-252
D/C: TO
HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
- Table of contents:
Info of HGTD6N40E1S
Info of HGTD6N50E1
Info of HGTD6N50E1S
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About HGTD6N40E1S
PDF/DataSheet Download
Datasheet: HGTD6N40E1S
File Size: 33331 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTD6N50E1
PDF/DataSheet Download
Datasheet: HGTD6N50E1
File Size: 33331 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HGTD6N50E1S
PDF/DataSheet Download
Datasheet: HGTD6N50E1S
File Size: 33331 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HGTD6N40E1S General Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
HGTD6N40E1S Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
HGTD6N40E1S Features
• 6A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
HGTD6N40E1S Typical Application
• Power Supplies
• Motor Drives
• Protective Circuits
• Motor Drives
• Protective Circuits
HGTD6N50E1 General Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
HGTD6N50E1 Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
HGTD6N50E1 Features
• 6A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
HGTD6N50E1 Typical Application
• Power Supplies
• Motor Drives
• Protective Circuits
• Motor Drives
• Protective Circuits
HGTD6N50E1S General Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
HGTD6N50E1S Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . IC90
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . PD
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . ... . . . .TJ, TSTG
HGTD6N50E1S Features
• 6A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• VCE(ON): 2.5V Max.
• TFALL: 1.0ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
HGTD6N50E1S Typical Application
• Power Supplies
• Motor Drives
• Protective Circuits
• Motor Drives
• Protective Circuits
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