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HGT5A27N120BN, HGT5A40N60A4D, HGTA32N60E2

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Info of HGT5A27N120BN
Info of HGT5A40N60A4D
Info of HGTA32N60E2

HGT5A27N120BN, HGT5A40N60A4D, HGTA32N60E2 Selling Leads, Datasheet

MFG:Fairchild Package Cooled:FSC/INF D/C:07+

HGT5A27N120BN, HGT5A40N60A4D, HGTA32N60E2 Picture

HGT5A27N120BN, HGT5A40N60A4D, HGTA32N60E2 Datasheet download

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Part Number: HGT5A27N120BN

MFG: Fairchild

Package Cooled: FSC/INF

D/C: 07+

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HGT5A27N120BN General Description

The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49280.

HGT5A27N120BN Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 72 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM 216 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . .S_SOA 150A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 500 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . E_AV 135 mJ
Operating and Storage Junction Temperature Range . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . t_SC 8 s
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . t_SC 15 s

HGT5A27N120BN Features

• 72A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com
• Avalanche Rated

HGT5A40N60A4D Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

HGT5A40N60A4D Features

• 100kHz Operation at 390V, 40A
• 200kHz Operation at 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o
• Low Conduction Loss

HGTA32N60E2 General Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGTA32N60E2 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector-Gate Voltage R_GE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR 600 V
Collector Current Continuous at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 50 A
Collector Current Continuous at V_GE = 15V at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . I_C9032 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM±30 V
Switching Sage Operating Area T_J= +150 . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 0.8 BV_CES
Power Dissipation Total at T_C= +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 208 W
Power Dissipation Derating T_C> +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T_J, T_STG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 3 ms
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 15 ms

HGTA32N60E2 Features

• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss

HGTA32N60E2 Connection Diagram

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