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HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A

HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-262(I2PAK)  D/C:08+

HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A Picture

HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A Datasheet download

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Part Number: HGT1S7N60C3D

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-262(I2PAK)

D/C: 08+

Description: IGBT UFS N-CH 600V 14A TO-263AB

 

 
 
 
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About HGT1S7N60C3D

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Datasheet: HGT1S7N60C3D

File Size: 201948 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About HGT1S7N60C3DS

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Datasheet: HGT1S7N60C3DS

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About HGT1N30N60A4D

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Datasheet: HGT1N30N60A4D

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HGT1S7N60C3D General Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25.and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGT1S7N60C3D Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 A
At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Average Diode Forward Current at 110o . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 8 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150, Figure 14 . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . .tSC 1 ms
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . .tSC 8 ms

HGT1S7N60C3D Features

• 14A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGT1S7N60C3D Connection Diagram

HGT1S7N60C3DS Parameters

Technical/Catalog InformationHGT1S7N60C3DS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 7A
Power - Max60W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S7N60C3DS
HGT1S7N60C3DS

HGT1S7N60C3DS General Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25.and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

HGT1S7N60C3DS Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 A
At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Average Diode Forward Current at 110o . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 8 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150, Figure 14 . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . .tSC 1 ms
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . .tSC 8 ms

HGT1S7N60C3DS Features

• 14A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

HGT1S7N60C3DS Connection Diagram

HGT1S7N60C3DS9A Parameters

Technical/Catalog InformationHGT1S7N60C3DS9A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)14A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 7A
Power - Max60W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S7N60C3DS9A
HGT1S7N60C3DS9A

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