HGT1S7N60B3DS, HGT1S7N60B3DS9A, HGT1S7N60B3S
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Datasheet: HGT1S7N60B3DS
File Size: 96586 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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Datasheet: HGT1S7N60B3S
File Size: 95124 KB
Manufacturer: INTERSIL [Intersil Corporation]
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HGT1S7N60B3DS Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . IC110 Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . .VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . .tSC
HGT1S7N60B3DS Features
• 14A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode
HGT1S7N60B3S Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C25 At T = 110 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at T = 150 °C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOAJ Power Dissipation Total at T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Power Dissipation Derating T > 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at V GE = 15V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t Short Circuit Withstand Time (Note 2) at V GE = 10VSC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
HGT1S7N60B3S Features
14A, 600V, T C = 25 °C 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150° C Short Circuit Rating Low Conduction Loss
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