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HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D

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Info of HGT1S3N60B3DS
Info of HGT1S3N60B3S
Info of HGT1S3N60C3D

HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-263 D/C:08+

HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D Picture

HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D Datasheet download

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Part Number: HGT1S3N60B3DS

MFG: Intersil/FAIRCHILD

Package Cooled: TO-263

D/C: 08+

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HGT1S3N60B3DS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .IC110
Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . .. . IEC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . .. VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . .. SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . TPKG
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . tSC

HGT1S3N60B3DS Features

• 7A, 600V TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
• TB334 "Guidelines for Soldering Surface Mount
- Components to PC Boards

HGT1S3N60B3S Maximum Ratings

HGTD3N60B3S, HGT1S3N60B3S HGTP3N60B3
Collector to Emitter Voltage	B_VCES	600	V
Collector Current Continuous
At _TC = 25oC	I_C25	7.0	A
At _TC = 110oC	I_C110	3.5	A
Collector Current Pulsed (Note 1)	I_CM	20	A
Gate to Emitter Voltage Continuous	V_GES	±20	V
Gate to Emitter Voltage Pulsed	V_GEM	±30	V
Switching Safe Operating Area at T_J = 150oC (Figure 2)	S_SOA	18A at 600V
Power Dissipation Total at T_C = 25oC	P_D	33.3	W
Power Dissipation Derating T_C > 25oC		0.27	W/oC
Reverse Voltage Avalanche Energy	E_ARV	100	m^J
Operating and Storage Junction Temperature Range	TJ, _TSTG	-55 to 150	oC
Maximum Lead Temperature for Soldering	T_L	260	oC
Short Circuit Withstand Time (Note 2) at V_GE = 12V	t_SC	5	µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V	t_SC	10	µs

HGT1S3N60B3S Features

• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss

HGT1S3N60C3D General Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

HGT1S3N60C3D Maximum Ratings

		HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS	UNITS
Collector-Emitter Voltage	B_VCES	600	V
Collector Current Continuous At T_C = 25°C	I_C25	6	A
At T_C = 110°C	I_C110	3	A
Collector Current Pulsed (Note 1)	I_CM	24	A
Gate-Emitter Voltage Continuous	V_GES	±20	V
Gate-Emitter Voltage Pulsed	V_GEM	±30	V
Switching Safe Operating Area at T_J = 150°C, Fig. 14	S_SOA	18A at 480V
Power Dissipation Total at T_C = 25°C	P_D	33	W
Power Dissipation Derating T_C > 25°C		0.27	W/°C
Operating and Storage Junction Temperature Range	T_J, T_STG	-40 to 150	°C
Maximum Lead Temperature for Soldering	T_L	260	°C
Short Circuit Withstand Time (Note 2) at V_GE = 10V, Fig 6	t_SC	8	s

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J= 125°C, R_GE = 82.

HGT1S3N60C3D Features

• 6A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

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