MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:06+ D/C:800/REEL
HGT1S20N60C389A, HGT1S20N60C3S9A, HGT1S2N120BNDS Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 06+
D/C: 800/REEL
Description: IGBT UFS N-CHAN 600V 45A TO-247
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PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HGT1S2N120BNDS
File Size: 89525 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | HGT1S20N60C3S9A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 45A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A |
| Power - Max | 164W |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGT1S20N60C3S9A HGT1S20N60C3S9A |
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
| Collector to Emitter Voltage ................ . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . ........................... IC110 Collector Current Pulsed (Note 1) . . . . . ........ICM Gate to Emitter Voltage Continuous. . . . . . . .. VGES Gate to Emitter Voltage Pulsed . . ............... VGEM Switching Safe Operating Area at TJ = 150oC (Figur.SSOA Power Dissipation Total at TC = 25oC . ......... . . PD Power Dissipation Derating TC > . . . . . . .. . . 25oC Operating and Storage Junction Temperature RangeTJ,TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. tSC |
1200 12 5.6 20 ±20 ±30 12A at 1200V 104 0.83 -55 to 150 300 260 8 15 |
V A A A V V W W/o C o C o C o C µs µs |
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