HAE21.3, HAF1001, HAF1002 Selling Leads, Datasheet
MFG:MOT Package Cooled:PLCC52 D/C:04+
HAE21.3, HAF1001, HAF1002 Datasheet download
Part Number: HAE21.3
MFG: MOT
Package Cooled: PLCC52
D/C: 04+
HAE21.3, HAF1001, HAF1002
- Table of contents:
Info of HAE21.3
Info of HAF1001
Info of HAF1002
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About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
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About HAF1002
PDF/DataSheet Download
Datasheet: HAF1002
File Size: 36057 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF1001 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
-16 |
V |
| Gate to source voltage |
VGSS |
3 |
V |
| Drain current |
ID |
-15 |
A |
| Drain peak current |
ID(pulse)1 |
-30 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Tc = 25°C
HAF1001 Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF1002 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
-16 |
V |
| Gate to source voltage |
VGSS |
3 |
V |
| Drain current |
ID |
-15 |
A |
| Drain peak current |
ID(pulse)1 |
-30 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Tc = 25°C
HAF1002 Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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