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HAF1010RJ

Features: • Logic level operation to (4 to 6 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch type shut down operation (need 0 voltage recovery)• High density mountingSpecifications ...

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SeekIC No. : 004358472 Detail

HAF1010RJ: Features: • Logic level operation to (4 to 6 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch...

HAF1010RJ Data Sheet

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Part Number:
HAF1010RJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Logic level operation to (4 to 6 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• High density mounting


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -60 V
Gate to source voltage VGSS -16 V
Gate to source voltage VGSS 2.5 V
Drain current ID -5 A
Drain peak current ID(pulse) Note1 -10 A
Body-drain diode reverse drain current IDR -5 A
Cannel dissipation PCh Note 2 2.5 W
Cannel temperature Tch 150
Storage temperature Tstg -55 ~ 150
Notes:
1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s


Description

This HAF1010RJ  FET has the over temperature shut-down capability sensing to the junction temperature. This HAF1010RJ FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..




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