HAF2005, HAF2007, HAF2007L Selling Leads, Datasheet
MFG:HIT Package Cooled:TO-220 D/C:TO-
HAF2005, HAF2007, HAF2007L Datasheet download
Part Number: HAF2005
MFG: HIT
Package Cooled: TO-220
D/C: TO-
HAF2005, HAF2007, HAF2007L
- Table of contents:
Info of HAF2005
Info of HAF2007
Info of HAF2007L
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About HAF2005
PDF/DataSheet Download
Datasheet: HAF2005
File Size: 32585 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2007
PDF/DataSheet Download
Datasheet: HAF2007
File Size: 43935 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2007L
PDF/DataSheet Download
Datasheet: HAF2007L
File Size: 43935 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF2005 General Description
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
HAF2005 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
40 |
A |
| Drain peak current |
ID(pulse)1 |
80 |
A |
| Body-drain diode reverse drain current |
IDR |
40 |
A |
| Channel dissipation |
Pch2 |
30 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2005 Features
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2007 General Description
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
HAF2007 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
5 |
A |
| Drain peak current |
ID(pulse)1 |
10 |
A |
| Body-drain diode reverse drain current |
IDR |
5 |
A |
| Channel dissipation |
Pch2 |
20 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2007 Features
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2007L General Description
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
HAF2007L Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
5 |
A |
| Drain peak current |
ID(pulse)1 |
10 |
A |
| Body-drain diode reverse drain current |
IDR |
5 |
A |
| Channel dissipation |
Pch2 |
20 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2007L Features
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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