HAF2011L, HAF2011S, HAF2015R Selling Leads, Datasheet
MFG:HIT Package Cooled:TO- D/C:TO-
HAF2011L, HAF2011S, HAF2015R Datasheet download
Part Number: HAF2011L
MFG: HIT
Package Cooled: TO-
D/C: TO-
HAF2011L, HAF2011S, HAF2015R
- Table of contents:
Info of HAF2011L
Info of HAF2011S
Info of HAF2015R
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About HAF2011L
PDF/DataSheet Download
Datasheet: HAF2011L
File Size: 35509 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2011S
PDF/DataSheet Download
Datasheet: HAF2011S
File Size: 35509 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF2011L Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
40 |
A |
| Drain peak current |
ID(pulse)1 |
80 |
A |
| Body-drain diode reverse drain current |
IDR |
40 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2011L Features
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2011S Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.5 |
V |
| Drain current |
ID |
40 |
A |
| Drain peak current |
ID(pulse)1 |
80 |
A |
| Body-drain diode reverse drain current |
IDR |
40 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2011S Features
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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