HAF1123, HAF2001, HAF2002 Selling Leads, Datasheet
MFG:RENESAS Package Cooled:SOP-8 D/C:05+
HAF1123, HAF2001, HAF2002 Datasheet download
Part Number: HAF1123
MFG: RENESAS
Package Cooled: SOP-8
D/C: 05+
HAF1123, HAF2001, HAF2002
- Table of contents:
Info of HAF1123
Info of HAF2001
Info of HAF2002
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About HAF1001
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2001
PDF/DataSheet Download
Datasheet: HAF2001
File Size: 56175 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About HAF2002
PDF/DataSheet Download
Datasheet: HAF2002
File Size: 39195 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
HAF2001 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.8 |
V |
| Drain current |
ID |
20 |
A |
| Drain peak current |
ID(pulse)1 |
40 |
A |
| Body-drain diode reverse drain current |
IDR |
20 |
A |
| Channel dissipation |
Pch2 |
50 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2001 Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
HAF2002 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
60 |
V |
| Gate to source voltage |
VGSS |
16 |
V |
| Gate to source voltage |
VGSS |
-2.8 |
V |
| Drain current |
ID |
20 |
A |
| Drain peak current |
ID(pulse)1 |
40 |
A |
| Body-drain diode reverse drain current |
IDR |
20 |
A |
| Channel dissipation |
Pch2 |
30 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
2. Value at Ta = 25°C
HAF2002 Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
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